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| www..com SUM40N02-12P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 FEATURES ID (A)a 40a 40a rDS(on) (W) 0.012 @ VGS = 10 V 0.026 @ VGS = 4.5 V Qg (Typ) 7.5 75 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for High-Side Synchronous Rectifier 100% Rg Tested APPLICATIONS D Desktop or Server CPU Core D Game Station D TO-263 DRAIN connected to TAB G DS G Top View S Ordering Information: SUM40N02-12P SUM40N02-12P--E3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C d TC = 25_C TC = 100_C Symbol VDS VGS ID IDM PD TJ, Tstg Limit 20 "20 40a 40a 90 83c 3.75 -55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Mounted)d Symbol RthJA RthJC Limit 40 1.8 Unit _C/W Document Number: 72111 S-42351--Rev. D, 20-Dec-04 www.vishay.com 1 www..com SUM40N02-12P Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 20 V, VGS = 0 V, TJ = 125_C VDS = 20 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 15 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A 10 0.021 90 0.0095 0.012 0.0175 0.022 0.026 S W 20 0.85 2 3 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Gate Resistance Turn-On Delay Timeb Rise Timeb Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 10 V, RL = 0.25 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W 1.5 VDS = 10 V, VGS = 4.5 V, ID = 40 A , , VGS = 0 V, VDS = 10 V, f = 1 MHz 1000 370 180 7.5 3.5 2.6 3.0 11 10 24 9 5.1 20 15 35 15 ns W 12 nC pF Turn-Off Delay Timeb Fall Timeb Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM Qrr IF = 40 A, di/dt = 100 A/ms m IF = 40 A, VGS = 0 V 1.1 20 0.7 0.007 40 90 1.5 40 1.1 0.022 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72111 S-42351--Rev. D, 20-Dec-04 www..com SUM40N02-12P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 90 6V 75 I D - Drain Current (A) 60 45 30 15 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 4V VGS = 10 thru 7 V I D - Drain Current (A) 75 60 45 30 15 0 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) 25_C 90 TC = -55_C Transfer Characteristics 5V 125_C 3V Transconductance 50 0.040 0.035 r DS(on) - On-Resistance ( W ) 40 g fs - Transconductance (S) TC = -55_C 0.030 0.025 0.020 0.015 0.010 0.005 0 0 10 20 30 40 50 0.000 0 On-Resistance vs. Drain Current 30 25_C 125_C VGS = 4.5 V 20 VGS = 10 V 10 15 30 45 60 75 90 ID - Drain Current (A) ID - Drain Current (A) 1500 Capacitance 10 VDS = 10 V ID = 40 A Gate Charge 1200 C - Capacitance (pF) Ciss 900 V GS - Gate-to-Source Voltage (V) 8 6 600 Coss 300 Crss 4 2 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Document Number: 72111 S-42351--Rev. D, 20-Dec-04 0 0 2 4 6 8 10 12 14 16 Qg - Total Gate Charge (nC) www.vishay.com 3 www..com SUM40N02-12P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.8 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 20 A I S - Source Current (A) Source-Drain Diode Forward Voltage rDS(on) - On-Resiistance (Normalized) 1.6 1.4 10 TJ = 150_C 1.2 TJ = 25_C 1.0 0.8 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 30 28 V (BR)DSS (V) ID = 250 mA 26 24 22 20 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72111 S-42351--Rev. D, 20-Dec-04 www..com SUM40N02-12P Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 50 1000 *Limited by rDS(on) Safe Operating Area 40 I D - Drain Current (A) I D - Drain Current (A) 100 10, 100 ms 1 ms 10 ms dc, 100 ms 30 10 20 10 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 Normalized Thermal Transient Impedance, Junction-to-Case 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72111. Document Number: 72111 S-42351--Rev. D, 20-Dec-04 www.vishay.com 5 |
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